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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1870
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The PA1870 is a switching device which can be driven directly by a 2.5-V power source. The PA1870 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
8
PACKAGE DRAWING (Unit: mm)
5 1 2, 3 4 5 6, 7 8 :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2
1.2 MAX. 1.00.05 0.25 3 +5 -3 0.10.05 0.5 0.6 +0.15 -0.1
FEATURES
* Can be driven by a 2.5-V power source * Low on-state resistance RDS(on)1 = 20.0 m MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 21.0 m MAX. (VGS = 4.0 V, ID = 3.0 A) RDS(on)3 = 27.0 m MAX. (VGS = 2.5 V, ID = 3.0 A) * Built-in G-S protection diode against ESD
1 4
0.145 0.055
3.15 0.15 3.0 0.1
6.4 0.2 4.4 0.1 1.0 0.2
ORDERING INFORMATION
PART NUMBER PACKAGE Power TSSOP8
0.65 0.27
+0.03 -0.08
PA1870GR-9JG
0.8 MAX. 0.10 M
0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note 1 Note 2
EQUIVALENT CIRCUIT
20 12 6.0 80 2.0 150 V V A A W C C
Gate1 Gate Protection Diode Source1 Drain1 Drain2
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
Body Diode
Gate2 Gate Protection Diode Source2
Body Diode
Total Power Dissipation Channel Temperature Storage Temperature
-55 to +150
Notes 1. PW 10 s, Duty Cycle 1% 2 2. Mounted on ceramic substrate of 50 cm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G14886EJ2V0DS00 (2nd edition) Date Published April 2001 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
(c)
2000
PA1870
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 16 V VGS = 4.0 V ID = 6.0 A IF = 6.0 A, VGS = 0 V IF = 6.0 A, VGS = 0 V di/dt = 50 A / s TEST CONDITIONS VDS = 20 V, VGS = 0 V VGS = 12 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3.0 A VGS = 4.5 V, ID = 3.0 A VGS = 4.0 V, ID = 3.0 A VGS = 2.5 V, ID = 3.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 10 V, ID = 3.0 A VGS(on) = 4.0 V RG = 10 0.5 5 12.0 13.0 15.0 15.0 15.5 20.8 900 295 170 55 210 300 340 10 2 6 0.80 400 1000 20.0 21.0 27.0 1.0 MIN. TYP. MAX. 10 10 1.5 UNIT
A A
V S m m m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T. RL PG. RG VDD VDS VGS 0 = 1 s Duty Cycle 1% VDS
Wave Form
VGS VGS
Wave Form
0
10%
VGS(on)
90%
D.U.T. IG = 2 mA 50 RL VDD
90% 90%
PG.
ID
0 10% 10%
td(on) ton
tr td(off)
toff
tf
2
Data Sheet G14886EJ2V0DS
PA1870
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80
5
100
FORWARD BIAS SAFE OPERATING AREA
d ite V) Lim .5 4 ID(pulse) =
PW
1m s
10 ms
dT - Derating Factor - %
ID - Drain Current - A
10
RV (@
n) (o DS GS
=1 0 s
ID(DC)
60
1
DC
10 0m s
40
20
0.1 Single Pulse PD (FET1) : PD (FET2) = 1 : 1
0
0
30 60 120 90 TA - Ambient Temperature - C
150
0.01 0.1
1.0
10.0
100.0
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 25 VGS = 4.5 V 20
FORWARD TRANSFER CHARACTERISTICS 100 10 VDS = 10 V
ID - Drain Current - A
VGS = 4.0 V 15
ID - Drain Current - A
TA = 125C
1 0.1 0.01 0.001 0.0001
25C 75C -25C
10
VGS = 2.5 V
5
0 0
0.1
0.2
0.3
0.4
0.5
0.00001
0
0.5
1
1.5
2
2.5
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
| yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE Vs. DRAIN CURRENT 100 VDS = 10 V
1.5 VDS = 10 V ID = 1mA
VGS(off) - Gate Cut-off Voltage - V
10
1
1
0.1
TA = -25C 25C 75C 125C
0.5 -50
0
50
100
150
0.01 0.01
0.1
1
10
100
Tch - Channel Temperature - C
ID - Drain Current - A
Data Sheet G14886EJ2V0DS
3
PA1870
RDS(on) - Drain to Source On-state Resistance - m
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 VGS = 2.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 30 VGS = 4.0 V
TA = 125C 20 75C 25C -25C 10
30
TA = 125C 75C
20
25C -25C
10 0.01
0.1
1
10
100
0 0.01
0.1
1
10
100
ID - Drain Current - A
ID - Drain Current - A
30 VGS = 4.5 V
RDS (on) - Drain to Source On-state Resistance - m
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 30 ID = 3.0 A
20
TA = 125C 75C 25C -25C
VGS = 2.5 V
20 4.0 V
10
4.5 V
0 0.01
0.1
1
10
100
10 -50
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - C
RDS (on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
50
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
Ciss, Coss, Crss - Capacitance - pF
ID = 3.0 A
f = 1 MHz
40
1000
30
Ciss
20
100
Coss Crss
10
0 0
2
4
6
8
10
12
10 0.1
1
10
100
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
4
Data Sheet G14886EJ2V0DS
PA1870
SWITCHING CHARACTERISTICS 1000
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100
IF - Source to Drain Current - A
VGS = 0V
td(on), tr, td(off), tf - Switching Time - ns
td(off) tf tr 100 td(on)
10
1
0.1
10 0.1
VDD = 10 V VGS(on) = 4 V RG = 10 1 ID - Drain Current - A 10
0.01 0.4
0.6
0.8
1
1.2
VF(S-D) - Body Diode Forward Voltage - V
DYNAMIC INPUT CHARACTERISTICS 6
VGS - Gate to Source Voltage - V
ID = 6.0 A 5 4 3 2 1 0 0 VDD = 16 V 10 V
1
2
3
4
5
6
7
8
9
10
Qg - Gate Charge - nC
5
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(ch-A) - Transient Thermal Resistance - C/W
100
62.5C/W
10
1 Single Pulse Mounted on Ceramic Board of 50 cm 2 x 1.1 mm PD(FET1) : PD(FET2) = 1 : 1 0.1 1m 10 m 100 m 1 PW - Pulse Width - s 10 100 1000
Data Sheet G14886EJ2V0DS
5
PA1870
[MEMO]
6
Data Sheet G14886EJ2V0DS
PA1870
[MEMO]
Data Sheet G14886EJ2V0DS
7
PA1870
* The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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